| PART |
Description |
Maker |
| M29W200BT90N6T M29W200BB120M1 M29W200BB120M1E M29W |
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W200BB55N6T M29W200BB70M1 M29W200BB70N6 M29W200 |
2 MBIT (256KB X8 OR 128KB X16, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY
2 MBIT (256KB X8 OR 128KB X16, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M36W108AT120ZM6T M36W108AB100ZM6T M36W108AT100ZM6T |
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Leaded Process Compatible:Yes RoHS Compliant: Yes
Low-Smoke Zero-Halogen (LSZH) Shipboard Precision Low-Loss Serial Analog & Digital Video Coax Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid RoHS Compliant: Yes
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product 81兆8，启动块闪存1兆位128KB的x8 SRAM的低电压多媒体存储产
|
意法半导
STMicroelectronics N.V.
|
| M28F101 |
1 Mbit (128Kb x8, Bulk) Flash Memory
|
SGS Thomson Microelectronics
|
| M29F100BB M29F100BT |
1 Mbit 128Kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory
|
ST Microelectronics
|
| HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 29F200 M295V200BB45M1T M295V200BB45N1T M29F200BB45 |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
Single SVS For 3.0V Systems W/Programmable Time Delay 8-SOIC -40 to 85
Single SVS For 3.0V Systems W/Programmable Time Delay 8-PDIP -40 to 85
Single Schmitt-Trigger Inverter 5-SC70 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory 2兆位56Kb x828KB的x16插槽，启动座单电源闪
Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
|
意法半导
STMicroelectronics N.V.
|
| M27C1001 M27C1001-10B1TR M27C1001-10B1X M27C1001-1 |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27V801-200P6TR M27V801 M27V801-120F1TR M27V801-12 |
NND - 8 MBIT (1MB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
Hex Inverting Drivers 14-PDIP 0 to 70
Hex Inverting Drivers 14-SO 0 to 70
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM 8兆x8低压紫外线EPROM和检察官办公室存储器
Quadruple 2-Input Positive-AND Buffers/Drivers 14-SOIC 0 to 70 8兆x8低压紫外线EPROM和检察官办公室存储器
Hex Inverting Drivers 14-SOIC 0 to 70 8兆x8低压紫外线EPROM和检察官办公室存储器
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM 81兆x8低压紫外线EPROM和检察官办公室存储器
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
